OmniBSI™‑2 Technology

OMNIVISION’s OmniBSI™‑2 Technology Extends OmniBSI™ to Enhance the Signal Level in Image Sensors

Technology Benefits

OmniBSI™‑2 image sensors reduce power consumption and enable more advanced image quality than OmniBSI™.

Advanced Image Quality

OmniBSI™‑2 is built according to 65 nm design rules for optimal pixel layout to maximize performance for enhanced image quality.

Improvements in Performance

OMNIVISION’s second-generation BSI technology puts the performance of the previous 1.4‑micron sensors into a 1.1‑micron pixel size to achieve an increase in low-light performance, improvements in quantum efficiency, and full-well capacity — and increase die per wafer.

Technology Features

OmniBSI™‑2 features advanced process node design rules and 300 mm wafer process to enhance camera performance and capabilities.

65 nm Design Rules

65 nm design rules enable compact pixel circuitry for optimal pixel layout to maximize performance for enhanced image quality.
300 mm Wafer Process

300 mm wafer process improves the stability of production and increases die per wafer for high-volume production applications.
Backside Illumination (BSI)

Backside illumination flips pixels and circuitry to collect the light from the backside of the image sensor.